-40%
NTE4164, NMOS 64K (65,536 x 1) Dynamic RAM (DRAM) 150nS ~ 16 Pin DIP (ECG4164)
$ 5.01
- Description
- Size Guide
Description
NTE4164, NMOS 64K (65,536 x 1) Dynamic RAM (DRAM) 150nS ~ 16 Pin DIP (ECG4164)FEATURES:
NMOS 64K (65,536 x 1) Dynamic RAM (DRAM) 150nS
Maximum Access Time: 150ns
65,536 x 1 Organization
Single +5V Supply (10% Tolerance)
Upward Pin Compatible with 4116 (16K Dynamic RAM)
Max Access Time from RAS: Less than 150ns
Min Cycle Time (Read or Write): Less than 260ns
Long Refresh Period: 4 milliseconds
Low Refresh Overhead Time: As Low As 1.8% of Total Refresh Period
All Inputs, Outputs, Clocks Fully TTL Compatible
3−State Unlatched Outputs
Page−Mode Operation for Faster Access
Low Power Dissipation: Operating - 135mW (Typ); Standby - 17.5mW (Typ)
16 Pin DIP Package
Replaces ECG4164